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US 2016/0240257 A1Published application
Storage device and a write method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsDONGHUN KWAK, Dongkyo Shim, Kitae Park, Hyun-Wook Park
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Abstract
A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
Claims1
A write method of a storage device, comprising:
- determining whether to perform a coarse program operation based on information about memory cells of a memory device,
- in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and
- in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation,
- wherein a range of a threshold voltage distribution near an upper program state is narrower than a range of a threshold voltage distribution near a lower program stage in the coarse program operation.
1 more element
Dependencies are inferred from the claim text.