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AssigneesSeoul National University R&Db Foundation, Samsung Electronics Co., Ltd.
InventorsYoung Hoon SON, Jung Ho AHN, Seong Il O
Estimating the term…
A memory device includes a first memory cell, a second memory cell, a precharge circuit, a sense amplifier, a switch circuit, and a controller. The first memory cell is connected to a first bit line, the second memory cell is connected to a second bit line, and the precharge circuit connected between the first bit line and the second bit line. The sense amplifier includes a first input terminal and a second input terminal. The switch circuit is connected to the first bit line and the first input terminal and to the second bit line and the second input terminal and is configured to control a connection between the first bit line and the first input terminal and a connection between the second bit line and the second input terminal in response to a switch signal. The controller is configured to generate the switch signal in response to a command.
A memory device including:
A memory module including:
A memory device including:
The memory device of claim 19, wherein a switch signal applied to the switch signal line decouples the first precharge bit line and the second precharge bit line from the sense amplifier during precharging of the first precharge bit line and the second precharge bit line by the precharge circuit.
Dependencies are inferred from the claim text.