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US 2016/0239037 A1Published application
Low power bandgap circuit device with zero temperature coefficient current generation
AssigneeInvenSense, Inc.
InventorDusan Vecera
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Abstract
A low power bandgap circuit device that generates temperature independent reference voltages and/or zero temperature coefficient currents is disclosed. The circuit comprises a first pair of transistors, an amplifier, a star connected resistive network, and a second pair of transistors, wherein zero temperature coefficient currents are generated through mirroring and reuse of current from the star connected resistive network.
Claims30
A low power bandgap reference circuit, comprising:
- a first resistive element coupled to a second resistive element and a third resistive element, the first resistive element, the second resistive element, and the third resistive element configured to form a star resistor network, wherein a first resistance associated with the first resistive element is determined as a function of a first reference resistive element, a second resistance associated with the second resistive element is determined as a function of a second reference resistive element, and a third resistance associated with the third resistive element is determined as a function of the first reference resistive element and the second reference resistive element.
A low power bandgap circuit device for providing a temperature independent reference voltage and a zero temperature coefficient current, comprising:
- a first bipolar transistor device coupled to a second bipolar transistor device;
- a loop amplifier device coupled to the first bipolar transistor device;
- a star connected resistor network coupled in parallel to the first bipolar transistor device and the second bipolar transistor device;
- and
- a first p-channel metal oxide semiconductor transistor device and a second p-channel metal oxide semiconductor transistor device coupled in series, wherein an emitter of the first bipolar transistor device is coupled to the first p-channel metal oxide semiconductor transistor device and an emitter of the second bipolar transistor device is coupled to an emitter of the second bipolar transistor device through a resistor.
2 more elements
Dependencies are inferred from the claim text.