Durable metal film deposition for mask repair

A method of repairing a semiconductor mask, the method comprising:

• positioning the semiconductor mask within a repair chamber including an e-beam repair tool;
• supplying a first gas to the repair chamber, the first gas comprising a chromium-containing repair material for repairing a defect on the semiconductor mask;
• supplying a second gas to the repair chamber, the second gas comprising an oxidative gas and assisting deposition of the chromium-containing repair material at a site of the defect on the semiconductor mask, wherein in the defect is an absence of a desired pattern material at the site of the defect;
• activating the repair tool such that the e-beam repair tool interacts with the first gas and the second gas to deposit chromium material at the site of the defect to repair the semiconductor mask, wherein a dimension of the deposited chromium material is less than about 16 nanometers;
• and
• removing the repaired semiconductor mask from the repair chamber.

A method of repairing a semiconductor substrate, the method comprising:

• supplying a first gas into a repair chamber, the first gas comprising a repair material for repairing a defect on the semiconductor substrate;
• supplying a second gas to the repair chamber, the second gas comprising a polar gas and assisting deposition of the repair material at a site of the defect on the semiconductor substrate;
• activating the repair tool such that the repair tool interacts with the first gas and the second gas to deposit the repair material at the site of the defect to repair the semiconductor substrate;
• and
• removing the repaired semiconductor substrate from the repair chamber.