Magnetometric sensor and current sensor

A magnetometric sensor comprising:

• a magnetoresistance effect element having a sensitivity axis in a specific direction, wherein
• the magnetoresistance effect element includes:
• a layered structure on a substrate, the layered structure comprising a fixed magnetic layer and a free magnetic layer stacked with a nonmagnetic material layer interposed therebetween;
• and
• a first antiferromagnetic layer on the free magnetic layer on the opposite side to the side facing the nonmagnetic material layer to cause an exchange coupling bias between the first antiferromagnetic layer and the free magnetic layer and align the magnetization direction of the free magnetic layer in a prescribed direction in a state of permitting variation in magnetization, wherein
• the free magnetic layer includes:
• a first sub-layer serving as a misfit-reducing sub-layer for decreasing the lattice mismatch of the free magnetic layer with the first antiferromagnetic layer;
• a first free magnetic sub-layer disposed between the first sub-layer and the nonmagnetic material layer;
• and
• a second free magnetic sub-layer disposed between the first sub-layer and the first antiferromagnetic layer and ferromagnetically coupled to the first free magnetic sub-layer, wherein
• the first sub-layer contains at least one selected from the group consisting of Pt, Pd, Ta, and W.

A magnetometric sensor comprising:

• a magnetoresistance effect element having a sensitivity axis in a specific direction, wherein
• the magnetoresistance effect element has a layered structure on a substrate, the layered structure comprising a fixed magnetic layer and a free magnetic layer stacked with a nonmagnetic material layer interposed therebetween;
• the magnetoresistance effect element includes a first antiferromagnetic layer on the free magnetic layer on the opposite side to the side facing the nonmagnetic material layer to cause an exchange coupling bias between the first antiferromagnetic layer and the free magnetic layer and align the magnetization direction of the free magnetic layer in a prescribed direction in a state of permitting variation in magnetization;
• the free magnetic layer includes:
• a first sub-layer being in contact with the first antiferromagnetic layer and serving as a misfit-reducing sub-layer for decreasing the lattice mismatch of the free magnetic layer with the first antiferromagnetic layer;
• and
• a ferromagnetic sub-layer made of a ferromagnetic material disposed on the first sub-layer on the opposite side to the side facing the first antiferromagnetic layer, wherein
• the first sub-layer contains at least one iron group element and at least one platinum group element.