Sic single crystal and method for producing same
AssigneesToyota Jidosha Kabushiki Kaisha, Nippon Steel & Sumitomo Metal Corporation
InventorsHironori DAIKOKU, Motohisa KADO, Kazuhito KAMEI, Kazuhiko KUSUNOKI
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Abstract
Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≦0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
Claims7
A SiC single crystal grown by a solution process, wherein:
- the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≦0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
A method for producing a SiC single crystal in which a SiC seed crystal substrate held on a seed crystal holding shaft is contacted with a Si—C solution having a temperature gradient such that the temperature decreases from the interior toward the surface, in a crucible, to grow a SiC single crystal, wherein the method comprises:
- growing the SiC single crystal from the {0001} face of the seed crystal substrate so that the grown SiC single crystal has a length in the growth direction of 2 mm or greater, and
- reducing the heat loss from the <11-20> direction to be lower than the heat loss from the <1-100> direction, and
- wherein the ratio S/C of the diameter S of the seed crystal substrate to the inner diameter C of the crucible satisfies the relationship 0.50≦S/C<1.0.
Dependencies are inferred from the claim text.