Forming cobalt interconnections on a substrate
AssigneeApplied Materials, Inc.
InventorsRoey Shaviv, John Lam, Timothy Bochman
Life of this patent
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Abstract
A wafer electroplating system has at least one first electroplating chamber having a first electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto a wafer at a first deposition rate. A second electroplating chamber has a second electrolyte containing cobalt ions, and is adapted to electroplate a cobalt film onto the wafer at a second deposition rate faster than the first deposition rate. The first and second electroplating chambers are within an enclosure of a processing system. A robot moves a wafer among the first and second electroplating chambers.
Claims20
A processing system comprising:
- an enclosure having a wafer loading station;
- at least one first electroplating chamber within the enclosure and having a first electrolyte containing cobalt ions, with the first electroplating chamber adapted to electroplate a cobalt film onto a wafer at a first deposition rate;
- and
- at least one second electroplating chamber within the enclosure and having a second electrolyte containing cobalt ions, with the second electroplating chamber adapted to electroplate a cobalt film onto a wafer at a second deposition rate, and with the second deposition rate faster than the first deposition rate;
- and
- at least one robot for moving a wafer from the loading station to one or more of the first and/or second electroplating chambers.
A processing method comprising:
- A] placing a wafer into a first electroplating chamber having a first electrolyte containing cobalt ions;
- B] electroplating a first cobalt film onto the wafer at a first deposition rate;
- C] rinsing and drying the wafer;
- D] placing the wafer into a second electroplating chamber having a second electrolyte containing cobalt ions;
- and
- E] electroplating a second cobalt film onto the wafer at a second deposition rate two to twenty times faster than the first deposition rate.
A processing system comprising:
- a first subsystem having at least one first electroplating chamber containing a first electrolyte containing cobalt ions, with the first electroplating chamber adapted to electroplate a cobalt film onto a wafer at a first deposition rate;
- and
- at least one second subsystem having a second electroplating chamber holding a second electrolyte containing cobalt ions, with the second electroplating chamber adapted to electroplate a cobalt film onto a wafer at a second deposition rate, and with the second deposition rate faster than the first deposition rate.
Dependencies are inferred from the claim text.