Nickel solution for forming film and film-forming method using same

Abstract

Provided is a nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. Specifically, provided is a nickel solution for forming a film, the nickel solution being adapted to, when disposing a solid electrolyte membrane between an anode and a substrate that functions as a cathode, bringing the solid electrolyte membrane into contact with the substrate and applying a voltage across the anode and the substrate so as to deposit nickel onto a surface of the substrate from nickel ions contained in the solid electrolyte membrane, thereby forming a nickel film containing the nickel on the surface of the substrate, supply the nickel ions to the solid electrolyte membrane. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.

Dependencies are inferred from the claim text.