Atomic-layer deposition method using compound gas jet

Abstract

A method for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes providing a chamber having an atmosphere and a stationary support located in the chamber. The moveable substrate is located in a spatial relationship with the stationary support. A pressurized compound fluid flow, including an inert fluid surrounding a reactive fluid, is provided simultaneously through the stationary support that impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.

Dependencies are inferred from the claim text.