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AssigneeJX Nippon Mining & Metals Corporation
InventorAtsutoshi Arakawa
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Provided is a magnetic material sputtering target produced from a sintered compact having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, wherein the target includes a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 μm or more can be drawn is one or less. The B-rich phase is finely dispersed in the magnetic material sputtering target of the present invention, and the machinability of the target is consequently improved. Moreover, significant effects are yielded in that the generation of particles is inhibited and the yield in the production of thin films is improved when the target is used for sputtering with a magnetron sputtering equipment comprising a DC power supply.
A magnetic material sputtering target produced from a sintered compact having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, wherein the target includes a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 μm or more can be drawn is one or less.
A method for producing a magnetic material sputtering target, wherein a raw material powder of a magnetic material target having a B content of 17 at % or more and 40 at % or less, and remainder being one or more elements selected from Co and Fe, is prepared via a gas atomization method, the gas atomized raw material powder is sintered to obtain a target, the target has a structure including a B-rich phase and a B-poor phase, and a number of the B-rich phases in which a maximum inscribed circle having a diameter of 15 μm or more can be drawn is one or less.
Dependencies are inferred from the claim text.