Dishing reducing in tungsten chemical mechanical polishing

A system for chemical mechanical planarization, comprising:

• a semiconductor substrate comprising at least one surface containing tungsten;
• a polishing pad;
• and
• a polishing composition comprising:
• 0.01 wt % to 30 wt % of abrasive;
• 0.01 wt % to 30 wt % of at least one oxidizing agent;
• 0.0005 wt % to about 10 wt % of activator;
• 0.1 ppm to 10,000 ppm of additive;
• pH adjusting agent;
• and
• remaining being water;
• wherein
• the abrasive is selected from the group consisting of colloidal silica, fumed silica, alumina, titania, ceria, zirconia, surface modified particles selected from the group consisting of activator-containing particles, composite particles, and lattice doped and inorganic oxide particles;
• and combinations thereof;
• the oxidizing agent is selected from the group consisting of peroxy compound selected from the group consisting of hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, propaneperoxoic acid, substituted or unsubstituted butaneperoxoic acid, hydroperoxy-acetaldehyde, potassium periodate, ammonium peroxymonosulfate;
• and non-per-oxy compound selected from the group consisting of ferric nitrite, KClO4, KBrO4, KMnO4;
• and combinations thereof;
• the activator is selected from the group consisting of (1) inorganic oxide particle with transition metal coated onto its surface;
• and the transition metal is selected from the group consisting of Fe, Cu, Mn, Co, Ce, and combinations thereof;
• (2) soluble catalyst selected from the group consisting of ammonium iron (III) oxalate trihydrate, iron(III) citrate tribasic monohydrate, iron(III) acetylacetonate and ethylenediamine tetraacetic acid, iron (III) sodium salt hydrate;
• (3) a metal compound having multiple oxidation states selected from the group consisting of Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V;
• and combinations thereof;
• the additive is selected from the group consisting of sarcosinate and related carboxylic compound, hydrocarbon substituted sarcosinate;
• organic polymer and copolymer having molecules containing ethylene oxide repeating units;
• ethoxylated surfactant;
• and combinations thereof;
• the pH adjusting agent is selected from the group consisting of amine, ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, organic acid, and/or salt thereof, and combinations thereof;
• and
• pH of the composition is between 2 and 10;
• wherein the at least one surface containing tungsten is in contact with the polishing pad and the polishing composition.

A polishing method for chemical mechanical planarization of a semiconductor substrate comprising at least one surface containing tungsten, comprising the steps of:

• contacting the at least one surface containing tungsten with a polishing pad;
• delivering a polishing composition to the surface, the polishing composition comprising:
• 0.01 wt % to 30 wt % of abrasive;
• 0.01 wt % to 30 wt % of at least one oxidizing agent;
• 0.0005 wt % to about 10 wt % of activator;
• 0.1 ppm to 10,000 ppm of additive;
• pH adjusting agent;
• and
• remaining being water;
• wherein
• the abrasive is selected from the group consisting of colloidal silica, fumed silica, alumina, titania, ceria, zirconia, surface modified particles selected from the group consisting of activator-containing particles, composite particles, and lattice doped and inorganic oxide particles;
• and combinations thereof;
• the oxidizing agent is selected from the group consisting of peroxy compound selected from the group consisting of hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, propaneperoxoic acid, substituted or unsubstituted butaneperoxoic acid, hydroperoxy-acetaldehyde, potassium periodate, ammonium peroxymonosulfate;
• and non-per-oxy compound selected from the group consisting of ferric nitrite, KClO4, KBrO4, KMnO4;
• and combinations thereof;
• the activator is selected from the group consisting of (1) inorganic oxide particle with transition metal coated onto its surface;
• and the transition metal is selected from the group consisting of Fe, Cu, Mn, Co, Ce, and combinations thereof;
• (2) soluble catalyst selected from the group consisting of ammonium iron (III) oxalate trihydrate, iron(III) citrate tribasic monohydrate, iron(III) acetylacetonate and ethylenediamine tetraacetic acid, iron (III) sodium salt hydrate;
• (3) a metal compound having multiple oxidation states selected from the group consisting of Ag, Co, Cr, Cu, Fe, Mo, Mn, Nb, Ni, Os, Pd, Ru, Sn, Ti, V;
• and combinations thereof;
• the additive is selected from the group consisting of sarcosinate and related carboxylic compound, hydrocarbon substituted sarcosinate;
• organic polymer and copolymer having molecules containing ethylene oxide repeating units;
• ethoxylated surfactant;
• and combinations thereof;
• the pH adjusting agent is selected from the group consisting of amine, ammonium hydroxide, nitric acid, phosphoric acid, sulfuric acid, organic acid, and/or salt thereof, and combinations thereof;
• and
• pH of the composition is between 2 and 10;
• and
• C) polishing the at least one surface containing tungsten with the polishing composition.