Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsHiroyuki TAKAHASHI, Tomoaki OGIWARA, Takuya ABE, Masahiko TOMITA, Jiro KATSUKI
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Abstract
There is provided a substrate processing method for removing an oxide film formed on a surface of a substrate. The method includes (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber; and (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber. The steps (a) and (b) are repeated a plurality of times.
Claims16
A substrate processing method for removing an oxide film formed on a surface of a substrate, comprising:
- (a) transforming the oxide film into a reaction by-product by supplying a halogen element-containing gas and a basic gas to the substrate accommodated in a processing chamber;
- and
- (b) sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber,
- wherein the steps (a) and (b) are repeated a plurality of times.
A substrate processing apparatus comprising:
- a mounting stage to mount thereon a substrate;
- a chamber to accommodate therein the mounting stage;
- a temperature control unit configured to control a temperature of the substrate mounted on the mounting stage;
- a gas supply unit configured to selectively supply a halogen element-containing gas, a basic gas and an inert gas into the chamber;
- a gas exhaust unit configured to exhaust the chamber;
- and
- a control unit configured to control operations of the temperature control unit, the gas supply unit and the gas exhaust unit,
- wherein the control unit is configured to repeatedly perform a plurality of times a step (a) of transforming the oxide film into a reaction by-product by supplying the halogen element-containing gas and a basic gas to the substrate while maintaining a temperature of the substrate mounted on the mounting stage at a predetermined level and maintaining the chamber at a depressurized atmosphere lower than an atmospheric pressure, and a step (b) of sublimating the reaction by-product to remove the reaction by-product from the substrate by stopping the supply of the halogen element-containing gas into the processing chamber and supplying an inert gas into the processing chamber while maintaining the chamber at a depressurized atmosphere lower than the depressurized atmosphere set in the step (a).
Dependencies are inferred from the claim text.