Esd protection circuit
AssigneeSolum Co., Ltd.
InventorJae Hyun LEE
Life of this patent
Estimating the term…
Abstract
An electrostatic discharge (ESD) protection circuit may include an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal and a source and a gate connected to a ground terminal, a capacitor connected to the drain and a bulk terminal of the NMOS in parallel, and a plurality of series-connected diodes having anodes of one ends thereof connected to the bulk terminal and cathodes of the other ends thereof connected to the ground terminal.
Claims21
An electrostatic discharge (ESD) protection circuit comprising:
- an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal and a source and a gate connected to a ground terminal;
- a capacitor connected between the drain and a bulk terminal of the NMOS;
- and
- a plurality of series-connected diodes having anodes of one ends thereof connected to the bulk terminal and cathodes of the other ends thereof connected to the ground terminal.
An electrostatic discharge (ESD) protection circuit comprising:
- an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal and a source and a gate connected to a ground terminal;
- a capacitor connected between the drain and a bulk terminal of the NMOS;
- and
- a plurality of diodes connected to each other in series between the bulk terminal and the ground terminal and shunting a current after an application of an electrostatic discharge and before an operation of the NMOS.
An electrostatic discharge (ESD) protection circuit comprising:
- an n-channel metal oxide semiconductor (NMOS) having a drain connected to a power terminal, a source and a gate connected to a ground terminal, and a parasitic bipolar capacitor;
- capacitors connected to the drain and a bulk terminal of the NMOS in parallel;
- and
- a plurality of series-connected diodes having anodes of one ends thereof connected to the bulk terminal and cathodes of the other ends thereof connected to the ground terminal to shunt a current after an application of an electrostatic discharge and before an operation of the NMOS.
Dependencies are inferred from the claim text.