Semiconductor structure and manufacturing method of the same

A manufacturing method of a semiconductor structure, comprising:

• providing a substrate, comprising forming a trench in the substrate;
• forming a stacked strip structure in the trench, comprising:
• forming a plurality of conductive strips, wherein each of the conductive strips has a horizontal conductive segment and two vertical conductive segments connected to the corresponding horizontal conductive segment, the horizontal conductive segments extend in a direction parallel to a bottom of the trench, and the vertical conductive segments extend in a direction perpendicular to the bottom of the trench;
• and
• forming a plurality of insulating strips, wherein the conductive strips and the insulating strips are interlaced, each of the insulating strips has a horizontal insulating segment and two vertical insulating segments connected to the corresponding horizontal insulating segment, and the vertical insulating segments extend in a direction parallel to the direction in which the vertical conductive segments extend;
• and
• forming at least one conductive structure electrically connected to at least one of the conductive strips;
• wherein the stacked strip structure has a horizontal stacked portion corresponding to the horizontal conductive segments and two vertical stacked portions corresponding to the vertical conductive segments, and a width of the vertical stacked portions is larger than a thickness of the horizontal stacked portion.