Iterative self-aligned patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsDE-FANG CHEN, HUAN-JUST LIN, CHUN-HUNG LEE, CHAO-CHENG CHEN
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Abstract
A method for self-aligned patterning includes providing a substrate, forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate, depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material, anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features, removing the mandrel layer, depositing a second spacer layer over remaining portions of the first set of spacers, and anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers.
Claims20
A method for self-aligned patterning, the method comprising:
- providing a substrate;
- forming a patterned mandrel layer that includes a plurality of mandrel features, the patterned mandrel layer being formed on the substrate;
- depositing a first spacer layer over the mandrel layer, the first spacer layer comprising a first type of material;
- anisotropically etching the first spacer layer to leave a first set of spacers on sidewalls of the mandrel features;
- removing the mandrel layer;
- depositing a second spacer layer over remaining portions of the first set of spacers;
- and
- anisotropically etching the second spacer layer to form a second set of spacers on sidewalls of the first set of spacers.
The method of claim 15 wherein the first type of material comprises a dielectric material.
A method for iterative self-aligned patterning, the method comprising:
- providing a substrate;
- forming a patterned mandrel layer on the substrate;
- depositing a first spacer layer over the mandrel layer such that the first spacer layer conforms to the mandrel layer, the first spacer layer comprising a first type of material;
- performing a first anisotropic etching process to the first spacer layer using a first etchant, thereby leaving a first set of spacers on sidewalls of the mandrel layer;
- removing the mandrel layer;
- forming a second spacer layer over the first set of spacers such that the second spacer layer conforms to the first set of spacers, the second spacer layer comprising a second type of material different from the first type of material;
- and
- performing a second anisotropic etching process to the second spacer layer using a second etchant different from the first etchant thereby forming a second set of spacers on sidewalls of the first set of spacers.
A melted for iterative self-aligned patterning, the method comprising:
- providing a substrate;
- forming a patterned mandrel layer on the substrate;
- forming a first set of spacers on sidewalk of the mandrel layer, the first set of spacers comprising a first type of material;
- removing the mandrel layer;
- forming a second set of spacers on sidewalls of the first set of spacers, the second set of spacers comprising a second type of material;
- removing the first set of spacers;
- forming a third set of spacers on sidewalls of the second set of spacers, the third set of spacers comprising the first type of material;
- and
- removing the second set of spacers.
Dependencies are inferred from the claim text.