US 2016/0111295 A1 · METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Abstract

A method for fabricating a semiconductor device is provided. The method includes the following steps. A substrate including a memory cell region and a peripheral region is provided, and a plurality of isolation structures are formed in the substrate. Each of the isolation structures contains an exposed portion protruding beyond the surface of the substrate. A first dielectric layer is formed on the substrate. A protective layer is formed on a sidewall of the exposed portion of each of the isolation structures. The first dielectric layer on the peripheral region is removed. A second dielectric layer is formed on the substrate of the peripheral region.

Claims16

Dependent claims

A method for fabricating a semiconductor device, comprising:

providing a substrate, the substrate comprising a memory cell region and a peripheral region, wherein a plurality of isolation structures are formed in the substrate, and each of the isolation structures contains an exposed portion protruding beyond a surface of the substrate;
forming a first dielectric layer on the substrate;
forming a protective layer on a sidewall of the exposed portion of each of the isolation structures;
removing the first dielectric layer on the peripheral region;
and
forming a second dielectric layer on the substrate of the peripheral region.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/566,721Filed 11 Dec 2014

Priority

TW 10313565015 Oct 2014

Published

21 Apr 2016

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 84/038
Using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology: using silicon technology, e.g. SiGe
H10D 84/0144
The components including insulated gates, e.g. IGFETs: manufacturing their gate insulating layers
H10B 41/49
Simultaneous manufacture of periphery and memory cells: comprising different types of peripheral transistor
H10D
Inorganic electric semiconductor devices

Method for fabricating semiconductor device

Life of this patent

Method for fabricating semiconductor device

Life of this patent

Abstract

Claims16