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AssigneeAmmono S.A.
InventorsRoman DORADZINSKI, Marcin ZAJAC, Robert KUCHARSKI
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The object of the invention is a method for obtaining monocrystalline gallium-containing nitride, from gallium-containing feedstock in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed, a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely: a) an oxygen getter in a molar ratio to ammonia ranging from 0.0001 to 0.2, b) an acceptor dopant in a molar ratio to ammonia not higher than 0.001. The invention also includes monocrystalline gallium-containing nitride, obtained by this method.
A method for obtaining monocrystalline gallium-containing nitride from gallium-containing feedstock, in the environment of supercritical ammonia-containing solvent with the addition of a mineraliser, containing an element of Group I (IUPAC, 1989), wherein, in an autoclave, two temperature zones are generated, i.e. a dissolution zone of lower temperature, containing feedstock, and, below it, a crystallisation zone of higher temperature, containing at least one seed a dissolution process of the feedstock and a crystallisation process of the gallium-containing nitride on the at least one seed are carried out, characterised in that at least two additional components are introduced into the process environment, namely:
Dependencies are inferred from the claim text.