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US 2016/0104764 A1Published application
Method for fabricating capacitor of semiconductor device
AssigneeSK hynix Inc.
InventorsSung-Won LIM, Seung-Jin YEOM, Hyo-Seok LEE
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Abstract
A method for fabricating a capacitor of a semiconductor device includes forming a mold layer over a substrate, forming a plurality of preliminary openings by selectively etching the mold layer, forming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings, and forming a plurality of storage nodes in the plurality of openings.
Claims10
1-8. (canceled)
A method for fabricating a capacitor of a semiconductor device, comprising:
- forming a mold layer over a substrate;
- forming a plurality of preliminary openings by selectively etching the mold layer;
- farming a plurality of openings where each opening is formed to have a given linewidth by forming a sacrificial layer on sidewalls of the preliminary openings;
- forming a plurality of cylindrical storage nodes in the openings;
- forming a protective layer- for gap-filling the openings over the storage nodes;
- forming a plurality of grooves where the storage nodes are protruded above the mold layer by selectively etching the mold layer and the sacrificial layer;
- forming a support pattern filling the grooves;
- and
- removing the mold layer, the sacrificial layer, and the protective layer.
6 more elements
Dependencies are inferred from the claim text.