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US 2016/0104763 A1Published application
Semiconductor device including capacitor and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYunjung CHOI, Se Hoon OH, Jin-Su LEE, Younsoo KIM, HanJin LIM
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Abstract
A semiconductor device includes a lower electrode on a lower structure, a dielectric layer conformally covering a surface of the lower electrode, an upper electrode conformally covering a surface of the dielectric layer, and a barrier layer on the upper electrode. The barrier layer and the upper electrode define a space on a sidewall of the lower electrode.
Claims20
A semiconductor device comprising:
- a lower electrode on a lower structure;
- a dielectric layer conformally covering a surface of the lower electrode;
- an upper electrode conformally covering a surface of the dielectric layer;
- and
- a barrier layer on the upper electrode,
- wherein the barrier layer and the upper electrode define a space on a sidewall of the lower electrode.
3 more elements
A semiconductor device comprising:
- a lower electrode on a lower structure;
- a first support pattern on a first sidewall of the lower electrode;
- a dielectric layer conformally covering the lower electrode and the first support pattern;
- an upper electrode conformally covering the dielectric layer;
- and
- a barrier layer on the upper electrode to cover a top surface of the lower electrode,
- wherein the first support pattern, the first sidewall of the lower electrode, and the lower structure define a first space under the first support pattern and surrounded by the upper electrode.
4 more elements
A semiconductor device comprising:
- a lower electrode on a lower structure;
- a dielectric layer on the lower electrode;
- an upper electrode on the dielectric layer;
- and
- a barrier layer on the upper electrode, the barrier layer having an upper portion including titanium-silicon nitride (TiSiN).
2 more elements
Dependencies are inferred from the claim text.