US 2016/0104762 A1Published application

Method of fabricating a mim capacitor with minimal voltage coefficient and a decoupling mim capacitor and analog/rf mim capacitor on the same chip with high-k dielectrics

AssigneeGlobalfoundries Inc.

InventorsDina TRIYOSO, Shao-Fu Sanford CHU, Bo YU

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Abstract

Methods for fabricating MIM capacitors with low VCC or decoupling and analog/RF capacitors on a single chip and the resulting devices are provided. Embodiments include forming: first and second metal lines in a substrate; a first electrode over, but insulated from, the first metal line; a first high-k dielectric layer on the first electrode, the first high-k dielectric layer having a coefficient α; a second electrode on the first high-k dielectric layer and over a portion of the first electrode; a second high-k dielectric layer on the second electrode, the second high-k dielectric layer having a coefficient α′ opposite in polarity but substantially equal in magnitude to α; a third electrode on the second high-k dielectric layer over the entire first electrode; and a metal-filled via through a dielectric layer down to the first metal line, and a metal-filled via through the dielectric layer down to the second metal line.

Claims20

Dependent claims

A method comprising:

forming a first, a second and a third metal line in a substrate and separated from each other;
forming a first electrode over, but insulated from, a portion of the first metal line;
forming a first high-k dielectric layer over the substrate, including on the first electrode, the first high-k dielectric layer having a quadratic voltage coefficient of capacitance (α);
forming a second electrode on the first high-k dielectric layer, over a portion of the first electrode between the first and second metal lines and over the second metal line;
forming a second high-k dielectric layer over the substrate, including on the second electrode, the second high-k dielectric layer having a coefficient α′ opposite in polarity but substantially equal in magnitude to α;
forming a third electrode on the second high-k dielectric layer over the entire first electrode;
forming a via dielectric layer over the substrate;
and
forming a first metal-filled via through the via dielectric layer, the first and third electrodes, and the first and second high-k dielectric layers, down to the first metal line, a second metal-filled via through the via dielectric layer, the first and second high-k dielectric layers, and the second electrode, down to the second metal line, and a third metal-filled via through the via dielectric layer, and the first and second high-k dielectric layers, down to the third metal line, wherein the third metal-filled via does not pass through any electrode.

6 more elements

A stacked metal-insulator-metal (MIM) device comprising:

a first a second and third metal line formed in a substrate and separated from each other;
a first electrode formed over, but insulated from, a portion of the first metal line;
a first high-k dielectric layer formed over the substrate, including on the first electrode, the first high-k dielectric layer having a quadratic voltage coefficient of capacitance (α);
a second electrode formed on the first high-k dielectric layer, over a portion of the first electrode between the first and second metal lines and over the second metal line;
a second high-k dielectric layer formed over the substrate, including on the second electrode, the second high-k having a coefficient α′ opposite in polarity but substantially equally in magnitude to α;
a third electrode formed on the second high-k dielectric layer over the entire first electrode;
a via dielectric layer formed over the substrate;
and
a first metal-filled via formed through the via dielectric layer, the first and third electrodes and the first and second high-k dielectric layers, down to the first metal line, a second metal-filled via formed through the via dielectric layer, the first and second high-k dielectric layers, and the second electrode, down to the second metal line, and a third metal-filled via through the via dielectric layer, and the first and second high-k dielectric layers, down to the third metal line, wherein the third metal-filled via does not pass through any electrode.

6 more elements

A method comprising:

forming a first, a second, a third, and a fourth metal line in a substrate and separated from each other with the second between the first and third and the third between the second and fourth;
forming a first electrode over, but insulated from, a portion of the first metal line;
forming a first high-k dielectric layer over the substrate, including on the first electrode, the first high-k dielectric layer meeting a decoupling capacitor (DECAP) metal-insulator-metal (MIM) requirement;
forming two second electrodes on the first high-k dielectric layer separated from each other, one formed over a portion of the first electrode between the first and second metal lines and over the second metal line and an other formed over the fourth metal line and a portion of the third metal line;
forming a second high-k dielectric layer over the substrate, including on the one second electrode and on the other second electrode, the second high-k layer meeting an analog/radio frequency (RF) MIM requirement;
forming two third electrodes on the second high-k dielectric layer separated from each other;
one formed over the entire first electrode and an other formed over a portion of the other second electrode between the third and fourth metal lines and over the third metal line;
forming a via dielectric layer over the substrate;
forming a first metal-filled via over the third metal line and through the via dielectric layer, down to the other third electrode and a second metal-filled via over the fourth metal line and through the via dielectric layer, down to the other second electrode;
and
forming a third metal-filled via through the via dielectric layer, the first and the one third electrode, and the first and second high-k dielectric layers, down to the first metal line, and a fourth metal-filled via through the via dielectric layer, the first and second high-k dielectric layers, and the one second electrode, down to the second metal line.

8 more elements

A stacked decoupling capacitor (DECAP) metal-insulator-metal (MIM) and an analog/radio frequency (RF) MIM device comprising:

a first, a second, a third, and a fourth metal line formed in a substrate and separated from each other with the second between the first and third and the third between the second and fourth;
a first electrode formed over, but insulated from, a portion of the first metal line;
a first high-k dielectric formed layer over the substrate, including on the first electrode, the first high-k dielectric layer meeting a DECAP MIM requirement;
two second electrodes formed on the first high-k dielectric layer separated from each other, one formed over a portion of the first electrode between the first and second metal lines and over the second metal line, and an other formed over the fourth metal line and a portion of the third metal line;
a second high-k dielectric layer formed over the substrate, including on the one second electrode and on the other second electrode, the second high-k layer meeting an analog/radio frequency (RF) MIM requirement;
two third electrodes formed on the second high-k layer separated from each other, one formed over the entire first electrode, and an other formed over a portion of the other second electrode between the third and fourth metal lines and over the third metal line;
a via dielectric layer formed over the substrate;
a first metal-filled via formed over the third metal line and through the via dielectric layer, down to the other third electrode, and a second metal-filled via formed over the fourth metal line and through the via dielectric layer, down to the other second electrode;
and
a third metal-filled via formed through the via dielectric layer, the first and the one third electrode, and the first and second high-k dielectric layers, down to the first metal line, and a fourth metal-filled via formed through the via dielectric layer, the first and second high-k dielectric layers, and the one second electrode, down to the second metal line.

7 more elements

Dependencies are inferred from the claim text.