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US 2016/0104745 A1Published application
Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJong Chul PARK, Shin Jae KANG, Shin KWON, Kyung Rae BYUN
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Abstract
A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.
Claims20
A semiconductor device comprising:
- a first magnetic layer including a plurality of first regions configured as a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the plurality of first regions;
- a tunnel barrier layer on the first magnetic layer;
- and
- a second magnetic layer on the tunnel barrier layer.
1 more element
A semiconductor device comprising:
- a plurality of magnetic memory elements on a substrate, the magnetic memory elements being configured as a plurality of memory cells and including a first magnetic layer, a tunnel barrier layer contacting the first magnetic layer, and a second magnetic layer contacting the tunnel barrier layer;
- and
- a plurality of selection devices on the substrate or within the substrate,
- wherein the first magnetic layer includes a plurality of first regions electrically connected to the plurality of selection devices and spaced apart from each other, and a second region encompassing the plurality of first regions and electrically isolated from the plurality of first regions.
1 more element
A semiconductor device comprising:
- a first magnetic layer on a substrate, the first magnetic layer including a plurality of first regions and a second region encompassing the plurality of first regions;
- an insulating layer between the plurality of first regions and the second region;
- and
- a second magnetic layer on the first magnetic layer;
- wherein
- an upper surface of the plurality of first regions and an upper surface of the second region are substantially co-planar;
- and
- a degree of crystallinity of the second magnetic layer is increased due to the upper surface of the plurality of first regions and the upper surface of the second region being substantially co-planar.
5 more elements
Dependencies are inferred from the claim text.