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US 2016/0103396 A1Published application
Double patterning method
AssigneeUnited Microelectronics Corp.
InventorsEn-Chiuan Liou, Teng-Chin Kuo, Chun-Chi Yu
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Abstract
A double patterning method comprises the following steps. First of all, a target layer and a mask layer stacked thereon are provided. Next, a first pattern opening is formed in the mask layer, and a width of the first pattern opening is measured to obtain a measuring value. Then, a second pattern opening is formed in the mask layer based on the measuring value, wherein the second pattern opening and the first pattern opening are co-planar. Finally, a bias trimming process is performed to trim the first pattern opening and the second pattern opening.
Claims13
A double patterning method, comprising:
- providing a target layer and a mask layer stacked thereon;
- forming a first pattern opening in the mask layer;
- measuring a width of the first pattern opening to obtain a measuring value;
- forming a second pattern opening in the mask layer based on the measuring value, wherein the second pattern opening and the first pattern opening are co-planar;
- and
- performing a bias trimming process to trim the first pattern opening and the second pattern opening.
3 more elements
Dependencies are inferred from the claim text.