Semiconductor memory device and method for manufacturing same

A method for manufacturing a semiconductor memory device, comprising:

• forming, on a conductive layer, a first layer, a sacrificial layer, a second layer, and a stacked body including a plurality of third layers separately stacked each other;
• forming a hole penetrating from the stacked body to the first layer;
• forming a film including a charge storage film on a side wall of the hole;
• forming a semiconductor body on a side wall of the film including the charge storage film;
• forming a slit penetrating from the stacked body to the first layer;
• removing the sacrificial layer by etching through the slit to form a cavity between the first layer and the second layer;
• removing, by etching through the slit, the film including the charge storage film and exposed in the cavity to expose a portion of the semiconductor body in the cavity;
• and
• forming an intermediate layer in the cavity to connect the portion of the semiconductor body with the intermediate layer.

A semiconductor memory device comprising:

• a first layer;
• a second layer provided on the first layer;
• a stacked body provided on the second layer and including a plurality of electrode layers separately stacked each other;
• a semiconductor body provided in the stacked body, the second layer and the first layer, the semiconductor body extending in a stacking direction of the stacked body;
• and
• a charge storage film provided between the semiconductor body and the plurality of electrode layers, the charge storage film covering a bottom portion of the semiconductor body,
• at least one of the first layer and the second layer having conductivity and connected with a side surface of the semiconductor body, the side surface provided above the bottom portion of the semiconductor body.