Semiconductor memory device and method for manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorsShinji Mori, Yoshio Ozawa, Tetsuya Kai
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Abstract
According to one embodiment, a semiconductor memory device includes a conductive layer; a stacked body provided on the conductive layer and including a plurality of electrode layers separately stacked each other; a semiconductor body provided in the stacked body and extending in a stacking direction in the stacking body and including a lower end portion provided in the conductive layer; and a charge storage film provided between the semiconductor body and the plurality of electrode layers. As viewed in the stacking direction, a maximum width of the lower end portion is larger than a maximum width of the semiconductor body provided inside a bottom surface of the charge storage film.
Claims19
A semiconductor memory device comprising:
- a conductive layer;
- a stacked body provided on the conductive layer and including a plurality of electrode layers separately stacked each other;
- a semiconductor body provided in the stacked body and extending in a stacking direction in the stacking body and including a lower end portion provided in the conductive layer;
- and
- a charge storage film provided between the semiconductor body and the plurality of electrode layers,
- as viewed in the stacking direction, a maximum width of the lower end portion being larger than a maximum width of the semiconductor body provided inside a bottom surface of the charge storage film.
A method for manufacturing a semiconductor memory device comprising:
- forming a stacked body on a conductive layer, the stacked body including a plurality of electrode layers separately stacked each other;
- forming a first hole penetrating the stacked body and extending in a direction of stacking in the stacked body;
- forming a film including a charge storage film on a side wall of the first hole;
- forming a cover film inside the film including the charge storage film;
- forming a second hole penetrating a bottom surface of the cover film and a bottom surface of the film including the charge storage film to reach the conductive layer;
- removing the cover film by etching through the first hole and exposing the film including the charge storage film;
- and
- forming a semiconductor body inside the film including the charge storage film and on a side wall of the second hole.
Dependencies are inferred from the claim text.