Semiconductor memory device and method for manufacturing same

A semiconductor memory device comprising:

• a stacked body including a plurality of electrode layers separately stacked each other;
• a semiconductor body provided in the stacked body and extending in stacking direction of the stacked body;
• a charge accumulation film provided between the semiconductor body and the plurality of electrode layers;
• a conductive film provided on the semiconductor body and containing metal silicide;
• and
• a contact part provided on the conductive film and electrically connected to the conductive film.

A method for manufacturing a semiconductor memory device, comprising:

• forming a stacked body including a plurality of electrode layers and a plurality of insulating layers, the plurality of electrode layers separately stacked each other, the plurality of insulating layers provided between the plurality of electrode layers;
• forming a hole penetrating through the stacked body and extending in stacking direction of the stacked body;
• forming a film including a charge accumulation film on an inner wall of the hole;
• forming a semiconductor body inside the film including the charge accumulation film;
• forming a semiconductor film having a higher impurity concentration than the semiconductor body on an upper end part of the hole;
• forming a conductive film containing a metal on the semiconductor body and the semiconductor film;
• and
• forming a contact part on the conductive film, the contact part being in contact with the conductive film.