Non-volatile semiconductor memory device and method for manufacturing same

A non-volatile semiconductor memory device, comprising:

• a stacked body including a plurality of electrode layers and a plurality of first insulating layers alternately stacked;
• an isolation region extending in the stacked body, the isolation region dividing the stacked body into a plurality of first regions;
• a plurality of first semiconductor members extending in one of the first regions in a stacked direction of the stacked body;
• a memory film provided between one of the first semiconductor members and one of the electrode layers;
• and
• an insulating region extending in the one of the first regions in the stacked direction, the insulating region extending from an upper end of the one of the first regions to a lowest first insulating layer of the first insulating layers,
• a composition of a second region of the one of the electrode layers being different from a composition of a third region of the one of the electrode layers, the second region being in contact with the insulating region, the third region being in contact with the isolation region.