Method of manufacturing semiconductor device and semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a first interlayer film on a first layer, the first interlayer film containing a first molecule and a second molecule, and the first molecule and the second molecule being chemically bonded with each other;
• heating the first interlayer film to phase-separate the first interlayer film;
• selectively removing the second molecule from the phase-separated first interlayer film;
• forming a second interlayer film on the first interlayer film from which the second molecule has been removed;
• and
• forming a second layer on the second interlayer film,
• wherein the first molecule has a first affinity with the first layer and a second affinity with the second layer, the first affinity being larger than the second affinity, and
• the second interlayer film has a third affinity with the first molecule and the second layer and a fourth affinity with the first layer, the third affinity being larger than the fourth affinity.

A method of manufacturing a semiconductor device, comprising:

• forming a first interlayer film on a first layer, the first interlayer film containing a first molecule and a second molecule, and the first molecule and the second molecule being chemically bonded with each other;
• heating the first interlayer film to phase-separate the first interlayer film;
• selectively removing the second molecule from the phase-separated first interlayer film;
• etching an upper surface of the first layer using, as a mask, the first interlayer film from which the second molecule has been removed;
• removing the first interlayer film after the etching of the upper surface of the first layer;
• forming a second interlayer film on the etched first layer after the removal of the first interlayer film;
• and
• forming a second layer on the second interlayer film.

A semiconductor device, comprising:

• a first layer;
• a first interlayer film on a first layer, the first interlayer film containing a first molecule and a second molecule, and the first molecule and the second molecule being chemically bonded with each other, and the first interlayer film being phase-separated;
• and
• a second layer on the phase-separated first interlayer film,
• wherein the first molecule has a first affinity with the first layer and a second affinity with the second layer, the first affinity being larger than the second affinity, and
• the second molecule has a third affinity with the second layer and a fourth affinity with the first layer, the third affinity being larger than the fourth affinity.