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US 2016/0064191 A1Published application
Ion control for a plasma source
AssigneeSputtering Components, Inc.
InventorPatrick Lawrence Morse
Life of this patent
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Abstract
One embodiment is directed to an apparatus including a plasma source and operation electronics coupled to the plasma source. The plasma source includes at least two electrodes configured to generate plasma. The operation electronics are configured to generate plasma with the at least two electrodes and apply an ion flux modification bias to the at least two electrodes.
Claims20
An apparatus comprising:
- a plasma source including at least two electrodes configured to generate plasma;
- electronics coupled to the plasma source, the electronics configured to:
- generate plasma with the at least two electrodes;
- and
- apply an ion flux modification bias to the at least two electrodes.
2 more elements
A method of controlling a plasma source having at least two electrodes configured to generate plasma, the method comprising:
- generating plasma with the at least two electrodes;
- and
- applying an ion flux modification bias to the at least two electrodes.
An electrical circuit for a plasma source, the electrical circuit comprising:
- a switching unit configured to couple to at least two electrodes of the plasma source, the at least two electrodes configured to generate plasma;
- and
- a controller coupled to the switching unit, wherein the controller is configured to control the switching unit to:
- generate plasma with the at least two electrodes;
- and
- apply an ion flux modification bias to the at least two electrodes.
3 more elements
Dependencies are inferred from the claim text.