Rank-modulation rewriting codes for flash memories
AssigneesCalifornia Institute of Technology, The Texas A&M University System
InventorsAnxiao Jiang, Eyal En Gad, Jehoshua Bruck, Eitan Yaakobi
Life of this patent
Estimating the term…
Loading patent…
AssigneesCalifornia Institute of Technology, The Texas A&M University System
InventorsAnxiao Jiang, Eyal En Gad, Jehoshua Bruck, Eitan Yaakobi
Estimating the term…
Rank modulation has been recently proposed as a scheme for storing information in flash memories. Three improved aspects are disclosed. In one aspect the minimum push-up scheme, for storing data in flash memories is provided. It aims at minimizing the cost of changing the state of the memory. In another aspect, multi-cells, used for storing data in flash memories is provided. Each transistor is replaced with a multi-cell of mm transistors connected in parallel. In yet another aspect, multi-permutations, are provided. The paradigm of representing information with permutations is generalized to the case where the number of cells in each level is a constant greater than one. In yet another aspect, rank-modulation rewriting schemes which take advantage of polar codes, are provided for use with flash memory.
A method of operating a memory device, the method comprising:
A computer method of operating a memory device, the method comprising:
A computer method of operating a memory device, the method comprising:
A computer method of operating a memory device, the method comprising:
A memory controller comprising:
A memory controller comprising:
A memory controller comprising:
A memory controller comprising:
A data device comprising:
A data device comprising:
A data device comprising:
A data device comprising:
Dependencies are inferred from the claim text.