Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming, in a substrate, a well including a first section and a second section, wherein the first section has a lower doping concentration and is closer to a surface of the substrate than the second section;
• forming a fin structure on the surface of the substrate;
• forming an isolation layer on the surface of the substrate, wherein the isolation layer exposes a portion of the fin structure, which serves as a fin for the semiconductor device;
• forming, on the isolation layer, a sacrificial gate conductor layer which intersects the fin structure via a sacrificial gate dielectric layer;
• forming a gate spacer on sidewalls of the sacrificial gate conductor layer;
• forming a dielectric layer on the isolation layer, and planarizing the dielectric layer to expose the sacrificial gate conductor layer;
• selectively removing the sacrificial gate conductor layer to form a gate trench on inner sides of the gate spacer;
• forming a Punch-Through Stopper (PTS) under the fin through the gate trench;
• and
• forming a gate conductor in the gate trench.