High breakdown voltage metal-insulator-metal capacitor

A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:

• a substrate;
• an isolation layer formed on said substrate;
• a first metal layer formed on said isolation layer;
• a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural HfO2 layers and plural alternate layers;
• an adhesion layer formed on said dielectric layer;
• and
• a second metal layer formed on said adhesion layer;
• wherein each of said plural alternate layers is a SiO2 layer or an Al2O3 layer;
• and said plural alternate layers include at least one said SiO2 layer and at least one said Al2O3 layer;
• wherein the thickness of each layer of said plural HfO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural HfO2 layers;
• and
• wherein the total thickness of said dielectric layer is thicker than 500 Å such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.

A high breakdown voltage metal-insulator-metal (MIM) capacitor for compound semiconductor integrated circuit comprises:

• a substrate;
• an isolation layer formed on said substrate;
• a first metal layer formed on said isolation layer;
• a dielectric layer formed on said first metal layer, wherein said dielectric layer is formed by alternately stacking plural ZrO2 layers and plural alternate layers;
• an adhesion layer formed on said dielectric layer;
• and
• a second metal layer formed on said adhesion layer;
• wherein each of said plural alternate layers is a SiO2 layer or an Al2O3 layer;
• and said plural alternate layers include at least one said SiO2 layer;
• wherein the thickness of each layer of said plural ZrO2 layers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of said plural ZrO2 layers;
• and
• wherein the total thickness of said dielectric layer is thicker than 500 Å such that the breakdown voltage of said high breakdown voltage MIM capacitor is higher than 50V.