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US 2015/0318287 A1Published application
Semiconductor device, and manufacturing for same
OwnerKenichi Suginoinventor
Life of this patent
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Abstract
A semiconductor device comprising: a semiconductor substrate; a first wiring having, in this order, on a first region of a semiconductor substrate, a second silicon film containing impurity, and a conductive film; and a second wiring having, in this order, on a second region of a semiconductor substrate, a first silicon film containing impurity, an etching stop film, a second silicon film containing impurity, and a conductive film.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a first wiring having, in this order, on a first region of said semiconductor substrate, a second silicon film containing impurity, and a conductive film;
- and
- a second wiring having, in this order, on a second region of said semiconductor substrate, a first silicon film containing impurity, an etching stop film, a second silicon film containing impurity, and a conductive film.
1 more element
A method of manufacturing a semiconductor device comprising:
- forming, in this order, a first silicon film containing impurity and an etching stop film on the second region of said semiconductor substrate;
- forming, in this order, a second silicon film containing impurity and a conductive film on the first and second regions of said semiconductor substrate;
- forming a first wiring having said second silicon film and conductive film in said first region, by etching the conductive film and said second silicon film of said first and second regions until said etching stop film is exposed;
- etching said etching stop film of said second region;
- and
- forming a second wiring having said second silicon film, conductive film, etching stop film and first silicon film in said second region, by etching said first silicon film of said second region.
3 more elements
Dependencies are inferred from the claim text.