3d tcad simulation

A system for simulating integrated circuit processing, comprising:

• a memory;
• and
• a data processor coupled to the memory, the data processor configured to transform a first representation of an integrated circuit undergoing processing into a second representation of the integrated circuit undergoing processing, the second representation of the integrated circuit undergoing processing including additional dopants relative to the first representation of the integrated circuit undergoing processing, the data processor performing:
• performing process simulation of a first addition of a first dopant under a first set of process conditions to generate a one-dimensional lateral profile of the first dopant and a one-dimensional depth profile of the first dopant;
• generating a two-dimensional lateral dopant profile from adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, by convolving the first mask with a lateral diffusion function in two dimensions, the lateral diffusion function customized with spreading data from the one-dimensional lateral profile;
• and
• generating a three-dimensional dopant distribution from adding the first dopant under the first set of process conditions with the mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant.

A system for simulating integrated circuit processing, comprising:

• a memory;
• and
• a data processor coupled to the memory, the data processor configured to transform a first representation of an integrated circuit undergoing processing into a second representation of the integrated circuit undergoing processing, the second representation of the integrated circuit undergoing processing including additional dopants relative to the first representation of the integrated circuit undergoing processing, the data processor performing:
• perform process simulation of a first addition of a first dopant under a first set of process conditions to generate a one-dimensional lateral profile of the first dopant and a one-dimensional depth profile of the first dopant;
• generate a two-dimensional lateral dopant profile from adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, using at least a first solution to a diffusion equation, the first solution to the diffusion equation customized with diffusion length data from the one-dimensional lateral profile;
• and
• generate a three-dimensional dopant distribution from adding the first dopant under the first set of process conditions with the mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant.

A non-transitory computer readable medium having stored thereon a plurality of instructions, which when executed by a processor, transforms a first representation of an integrated circuit undergoing processing into a second representation of the integrated circuit undergoing processing, the second representation of the integrated circuit undergoing processing including additional dopants relative to the first representation of the integrated circuit undergoing processing, comprising the instructions that perform:

• performing process simulation of a first addition of a first dopant under a first set of process conditions to generate a one-dimensional lateral profile of the first dopant and a one-dimensional depth profile of the first dopant;
• generating a two-dimensional lateral dopant profile from adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, using at least a diffusion equation, the diffusion equation customized with diffusion length data from the one-dimensional lateral profile;
• and
• generating a three-dimensional dopant distribution from adding the first dopant under the first set of process conditions with the mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant.

A non-transitory computer readable medium having stored thereon a plurality of instructions, which when executed by a processor, transforms a first representation of an integrated circuit undergoing processing into a second representation of the integrated circuit undergoing processing, the second representation of the integrated circuit undergoing processing including additional dopants relative to the first representation of the integrated circuit undergoing processing, comprising the instructions that perform:

• accessing a one-dimensional lateral profile of a first dopant and a one-dimensional depth profile of the first dopant, the one-dimensional lateral profile representative of a first addition of the first dopant under a first set of process conditions;
• accessing a two-dimensional lateral dopant profile of the first dopant, the two-dimensional lateral dopant profile representative of adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, wherein two-dimensional lateral dopant profile is a result of convolving the first mask with a lateral diffusion function in two dimensions, the lateral diffusion function customized with spreading data from the one-dimensional lateral profile;
• and
• generating a three-dimensional dopant distribution from adding the first dopant under the first set of process conditions with the mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant.

A system for simulating integrated circuit processing, comprising:

• a memory;
• and
• a data processor coupled to the memory, the data processor configured to transform a first representation of an integrated circuit undergoing processing into a second representation of the integrated circuit undergoing processing, the second representation of the integrated circuit undergoing processing including additional dopants relative to the first representation of the integrated circuit undergoing processing, the data processor performing:
• accessing a one-dimensional lateral profile of a first dopant and a one-dimensional depth profile of the first dopant, the one-dimensional lateral profile representative of a first addition of the first dopant under a first set of process conditions;
• accessing a two-dimensional lateral dopant profile of the first dopant, the two-dimensional lateral dopant profile representative of adding the first dopant under the first set of process conditions with a first mask corresponding to the first dopant, wherein two-dimensional lateral dopant profile is a result of using at least a first solution to a diffusion equation, the first solution to the diffusion equation customized with diffusion length data from the one-dimensional lateral profile;
• and
• generating a three-dimensional dopant distribution from adding the first dopant under the first set of process conditions with the mask, by combining the two-dimensional lateral profile of the dopant with the one-dimensional depth profile of the dopant.