Multi-Color Light Emitting Devices with Compositionally Graded Cladding Group III-Nitride Layers Grown on Substrates

A light emitting device comprising:

• a heavily doped p-type Si substrate;
• a buffer layer formed on the p-type Si substrate;
• an n-type GaN layer formed on the buffer layer;
• a compositionally graded n-type InGaN layer formed on n-type GaN layer and graded from GaN to a target InGaN composition having a desired percentage of In;
• an n-type InGaN layer formed on the compositionally graded n-type InGaN layer and a p-type InGaN layer formed on the n-type InGaN layer, wherein the n-type and p-type InGaN layers comprise the target InGaN composition and form the p/n junction;
• a graded p-type InGaN layer formed on p-type InGaN layer and graded from the target InGaN composition to GaN;
• a p-type GaN layer formed on the graded p-type InGaN layer;
• an ohmic contact for injecting current;
• and
• a top ohmic contact formed on a surface of one of the layers.

A method of manufacturing a light emitting device or a component thereof, comprising:

• providing a substrate;
• depositing an N-type Gallium Nitride layer;
• following said N-type Gallium Nitride layer with an n-type InGaN layer compositionally graded from GaN to a target InGaN composition having a desired percentage of In;
• and
• following said graded n-type InGaN layer with at least an n-type InGaN layer and a p-type InGaN layer of the target InGaN composition.