Semiconductor structure and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• a) forming a gate stack on a semiconductor substrate (100) and removing parts of the substrates situated on two sides of the gate stack;
• b) forming sidewall spacers (230) on sidewalls of the gate stack and on sidewalls of the part of the substrate (100) under the gate stack;
• c) forming doped regions (110) in substrates on two sides of the gate stack, and forming a first dielectric layer (300) to cover the entire semiconductor structure;
• d) selectively removing parts of the gate stack and parts of the first dielectric layer (300) in the direction of the width of the gate stack to form a channel region opening (211) and source/drain region openings (212) on two sides thereof;
• e) forming a high K dielectric layer (240) on sidewalls of the channel region opening (211);
• and
• f) implementing epitaxy process to form a continuous fin structure (250) that spans across the channel region opening (211) and the source/drain region openings (212).