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US 2015/0311290 A1Published application
Epitaxial wafer and switch element and light-emitting element using same
AssigneeLG Innotek Co., Ltd.
InventorsSeok Min KANG, Ji Hye KIM, Min Young HWANG
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Abstract
An epitaxial wafer comprises an epitaxial layer disposed on a substrate. The epitaxial layer comprises first to third semiconductor layers. The third semiconductor layer has a thickness that is thicker than that of the first semiconductor layer. A second doping density of the second semiconductor layer is between a first doping density of the first semiconductor layer and a third doping density of the third semiconductor layer.
Claims20
An epitaxial wafer comprising:
- a substrate;
- and
- an epitaxial layer on the substrate,
- wherein the epitaxial layer comprises:
- a first semiconductor layer disposed on the substrate and having a first doping concentration;
- a second semiconductor layer disposed on the first semiconductor layer and having a second doping concentration;
- and
- a third semiconductor layer disposed on the second semiconductor layer, having a thickness thicker than a thickness of the first semiconductor layer, and having a third doping concentration, and
- wherein the second doping concentration is between the first doping concentration and the third doping concentration.
6 more elements
A switch element comprising:
- a substrate;
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- a third semiconductor layer on the second semiconductor layer;
- an anode electrode on the third semiconductor layer;
- and
- a cathode electrode under the substrate,
- wherein the third semiconductor layer has a thickness thicker than a thickness of the first semiconductor layer, and a second doping concentration of the second semiconductor layer is between a first doping concentration of the first semiconductor layer and a third doping concentration of the third semiconductor layer.
5 more elements
A light emitting element comprising:
- a substrate;
- an epitaxial layer on the substrate;
- and
- a light emitting structure disposed on the epitaxial layer and comprising at least a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer,
- wherein the epitaxial layer comprises:
- a first semiconductor layer on the substrate;
- a second semiconductor layer on the first semiconductor layer;
- and
- a third semiconductor layer on the second semiconductor layer, and
- wherein the third semiconductor layer has a thickness thicker than a thickness of the first semiconductor layer, and a second doping concentration of the second semiconductor layer is between a first doping concentration of the first semiconductor layer and a third doping concentration of the third semiconductor layer.
7 more elements
Dependencies are inferred from the claim text.