Pmos transistor with improved mobility of the carriers
AssigneesSTMicroelectronics (Crolles 2) SAS, STMicroelectronics S.r.l.
InventorsVincent Fiori, Sebastien Gallois-Garreignot, Denis Rideau, Clement Tavernier
Life of this patent
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Abstract
A substrate includes an active region oriented along a crystallographic face (100) and limited by an insulating region. A MOS transistor includes a channel oriented longitudinally along a crystallographic direction of the <110> type. A basic pattern made of metal and formed in the shape of a T is electrically inactive and situated over an area of the insulating region adjacent a transverse end of the channel. A horizontal branch of the T-shaped basic pattern is oriented substantially parallel to the longitudinal direction of the channel.
Claims20
An integrated circuit, comprising:
- a substrate containing silicon;
- at least one active region oriented along a crystallographic face (100) of the substrate and limited by an insulating region;
- at least one PMOS transistor situated within and on the active region, the PMOS transistor having a channel oriented longitudinally along a crystallographic direction of the <110> type;
- and
- at least one basic pattern in the shape of a T which is electrically inactive and situated above at least one area of the insulating region situated adjacent at least one transverse end of the channel;
- wherein the T shape of the basic pattern includes a horizontal branch oriented substantially parallel to a longitudinal direction of the channel.
An integrated circuit, comprising:
- a substrate including an active region oriented along a crystallographic face (100) of the substrate;
- an insulating region in substrate which delimits the active region;
- a MOS transistor having a channel formed in the active region of the substrate and oriented longitudinally along a crystallographic direction of the <110> type, the channel having a length and width;
- and
- a channel stressing structure made of a metal material which is electrically inactive and located above the insulating region adjacent an end of the channel, the channel stressing structure having a first metal segment having a length oriented parallel to the channel length and a second metal segment having a width oriented parallel to the channel width;
- wherein the length of the first metal segment is in excess of the channel length.
Dependencies are inferred from the claim text.