Film Scheme for MIM Device

A MIM (metal-insulator-metal) capacitor, comprising:

• a capacitor bottom metal layer;
• a multi-layer capacitor dielectric layer disposed over the capacitor bottom metal layer, wherein the multi-layer capacitor dielectric layer comprises:
• a first crystalline high-k dielectric layer;
• and
• an amorphous dielectric layer disposed onto the first crystalline high-k dielectric layer, wherein the amorphous dielectric layer has a larger energy band gap than the first crystalline high-k dielectric layer;
• a second crystalline high-k dielectric layer disposed onto the amorphous dielectric layer, wherein the second crystalline high-k dielectric layer has a larger dielectric constant than the amorphous dielectric layer;
• and
• a capacitor top metal layer disposed over the multi-layer capacitor dielectric layer.

A method of forming a MIM (metal-insulator-metal) capacitor, comprising:

• forming a capacitor bottom metal layer;
• forming a multi-layer capacitor dielectric layer over the capacitor bottom metal layer, wherein the multi-layer capacitor dielectric layer comprises a first high-k dielectric layer disposed over the capacitor bottom metal layer and an amorphous dielectric layer disposed onto the first high-k dielectric layer;
• and
• forming a capacitor top metal layer over the multi-layer capacitor dielectric layer.