Thin film transistor array substrate and manufacturing method thereof
AssigneeSamsung Display Co., Ltd.
InventorsYoung-Wook LEE, Woo-Geun LEE, Ki-Won KIM, Hyun-Jung LEE, Ji-Soo OH
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AssigneeSamsung Display Co., Ltd.
InventorsYoung-Wook LEE, Woo-Geun LEE, Ki-Won KIM, Hyun-Jung LEE, Ji-Soo OH
Estimating the term…
A method of manufacturing a thin film transistor (TFT) array substrate includes forming a gate line and a gate electrode on a substrate, forming a gate-insulating layer and an oxide semiconductor layer on the gate line and the gate electrode, forming etch stop patterns at a thin-film transistor area and an area where the gate line and the data line overlap each other, forming a data conductor on the oxide semiconductor layer and the etch stop patterns, the data conductor comprising a source electrode and a drain electrode that constitute a TFT together with the gate electrode, and forming a data line extending in a direction intersecting the gate line.
A method of manufacturing a thin film transistor (TFT) array substrate, the method comprising:
Dependencies are inferred from the claim text.