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US 2015/0311163 A1Published application
Anchoring Structure and Intermeshing Structure
AssigneeInfineon Technologies AG
InventorsErwin Vogl, Markus Zundel
Life of this patent
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Abstract
An anchoring structure for a metal structure of a semiconductor device includes an anchoring recess structure having at least one overhanging side wall, the metal structure being at least partly arranged within the anchoring recess structure.
Claims16
An anchoring structure for a device on a substrate, the structure comprising:
- a structured device layer on the substrate, the structured device layer comprising at least one topology structure and a main surface facing away from the substrate;
- and
- a metal structure on the structured device layer, the metal structure extending at least over part of the topology structure;
- wherein the structured device layer comprises one or more electrically insulating layers, and the topology structure comprises a recess in the structured device layer with a depth that is smaller than a thickness of the structured device layer, or
- wherein the structured device layer comprises only a semiconducting layer without doping or with a single doping, and the topology structure comprises a recess in the structured device layer with a depth that is smaller than the thickness of the structured device layer, or
- wherein the topology structure comprises a structure projecting beyond the main surface of the structured device layer.
3 more elements
An anchoring structure comprising:
- a device comprising a main surface;
- a recess extending into the device starting from the main surface of the device;
- and
- a conductor layer structure which, with a proportion of at least 20% of a cross-sectional area of the conductor layer structure, runs within the recess below the main surface of the device over a length of the conductor layer structure, the conductor layer structure comprising at least one metal layer.
1 more element
An anchoring structure comprising:
- a substrate comprising a main surface, a monocrystalline area or an epitaxial area extending as far as the main surface of the substrate;
- a recess in the monocrystalline area or the epitaxial area on the main surface of the substrate;
- and
- a conductor layer structure comprising a metal layer on the main surface of the substrate, wherein the conductor layer structure extends into the recess as far as a bottom of the recess.
1 more element
Dependencies are inferred from the claim text.