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US 2015/0311090 A1Published application
Method of manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsunori ISOGAI, Tomonori AOYAMA
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming a first layer above a semiconductor substrate, implanting in a surface of the first layer, at least one kind of ions of an element contained in the first layer, and applying microwave to the first layer in which at least one kind of the ions are implanted.
Claims15
A method for manufacturing a semiconductor device, comprising:
- forming a first layer above a semiconductor substrate;
- implanting in a surface of the first layer, at least one kind of ions of an element contained in the first layer;
- and
- applying microwave to the first layer in which said at least one kind of the ions are implanted.
1 more element
A method for manufacturing a capacitor for a semiconductor device, comprising:
- forming a first conductive layer;
- forming an insulating layer on the first conductive layer;
- implanting in a surface of the insulating layer, at least one kind of ions of an element contained in the insulating layer;
- forming a second conductive layer on the insulating layer;
- patterning the first conductive layer, the insulating layer, and the second conductive layer;
- and
- applying microwave to the insulating layer in which said at least one kind of the ions are implanted.
4 more elements
Dependencies are inferred from the claim text.