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AssigneeGlobalfoundries Inc.
InventorsEric S. Kozarsky, Shiv Kumar Mishra
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Approaches for providing a fin field effect transistor device (FinFET) with a planar block area to enable variable fin pitch and width are disclosed. Specifically, approaches are provided for forming a plurality of fins patterned from a substrate, the plurality of fins comprising: a first set of fins having a variable pitch and a variable width; and a second set of fins having a variable pitch and a uniform width, wherein the first set of fins is adjacent the second set of fins. In one approach, the first set of fins is patterned from the planar block area, which is formed over the substrate, and the second set of fins is formed using a sidewall image transfer (SIT) process.
A method for forming a fin field effect transistor (FinFET) device, the method comprising:
A method for forming a fin field effect transistor (FinFET) device having a planar block area to enable variable fin pitch and width, the method comprising:
A fin field effect transistor (FinFET) device comprising:
Dependencies are inferred from the claim text.