Self-aligned gate contact formation

A method for forming self-aligned contacts in a semiconductor device, the method comprising:

• forming a set of gate structures over a substrate;
• patterning a sacrificial layer to form a set of contact placeholders over a set of fins formed from the substrate;
• etching a hard mask from the set of contact placeholders to expose the sacrificial layer;
• forming a gate contact opening by etching an oxide over at least one of the set of gate structures;
• forming a set of source/drain (S/D) contact openings in the semiconductor device by removing the sacrificial layer from atop the set of fins;
• and
• depositing a metal material over the semiconductor device to form a gate contact within the gate contact opening and a set of S/D contacts within the set of S/D contact openings.

A semiconductor device including a set of self-aligned contacts, the semiconductor device comprising:

• a gate contact opening formed by etching a fillable material over at least one of a set of gate structures;
• a set of source/drain (S/D) contact openings formed in the semiconductor device by removing a sacrificial layer from atop a set of fins formed from a substrate;
• and
• a metal material deposited over the semiconductor device to form a gate contact within the gate contact opening and a set of S/D contacts within the set of S/D contact openings.