Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of fabricating semiconductor devices

A method of treating a substrate comprising:

• generating a energy beam at an energy source;
• receiving the energy beam at a beam section shaper that modifies a section shape thereof to output a shape-modified energy beam;
• receiving the energy beam at a beam intensity shaper, the received energy beam having a first intensity profile, the beam intensity shaper outputting an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof;
• and
• applying the intensity-modified energy beam to a substrate positioned at a stage, the intensity-modified energy beam incident at the substrate for treating the substrate.