Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A substrate processing apparatus, comprising:

• a process chamber in which processing to a substrate is performed;
• a first precursor gas supply system configured to supply a first precursor gas containing boron and a halogen group into the process chamber;
• a second precursor gas supply system configured to supply a second precursor gas containing a predetermined element and an amino group into the process chamber;
• a control part configured to control the first precursor gas supply system and the second precursor gas supply system such that a thin film containing the predetermined element, boron, carbon, and nitrogen is formed on the substrate in the process chamber by performing a cycle a predetermined number of times, the cycle comprising:
• forming a first layer containing boron and the halogen group by supplying the first precursor gas to the substrate;
• and forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying the second precursor gas to the substrate and modifying the first layer,
• wherein in the act of forming the thin film by performing the cycle the predetermined number of times, the first layer is first formed on the substrate.

A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process of forming a thin film containing a predetermined element, boron, carbon, and nitrogen on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle comprising:

• forming a first layer containing boron and a halogen group by supplying a first precursor gas containing boron and the halogen group to the substrate;
• and
• forming a second layer containing the predetermined element, boron, carbon, and nitrogen by supplying a second precursor gas containing the predetermined element and an amino group to the substrate and modifying the first layer,
• wherein in the act of forming the thin film by performing the cycle the predetermined number of times, the first layer is first formed on the substrate.