Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating
AssigneeZeno Semiconductor, Inc.
InventorYuniarto Widjaja
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Abstract
Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described.
Claims21
1-37. (canceled)
A semiconductor memory cell comprising:
- a bipolar device configured to store data when power is applied to said cell;
- and
- a nonvolatile memory comprising a resistance change element configured to store data stored in said bipolar device upon transfer thereto.
A semiconductor memory cell comprising:
- a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said cell and first and second regions located such that at least a portion of the floating body is located between said first and second regions, said capacitorless transistor configured to function as a bipolar device;
- and
- a nonvolatile memory comprising a resistance change element configured to store data stored in said bipolar device upon transfer thereto.
A semiconductor memory cell comprising:
- a bipolar device configured to store data when power is applied to said cell;
- and
- a nonvolatile memory comprising a resistance change element configured to store data stored in said bipolar device upon transfer thereto, wherein said transfer occurs upon discontinuance of power to said cell.
Dependencies are inferred from the claim text.