Method for forming pattern and method for producing device
AssigneeNikon Corporation
InventorYoji WATANABE
Life of this patent
Estimating the term…
Abstract
A pattern forming method which includes: forming a plurality of first line patterns of which longitudinal direction is a first direction and a plurality of second line patterns of which longitudinal direction is the first direction and of which etching characteristic is different from etching characteristic of the plurality of first line patterns, so that at least one edge portion of each of the plurality of first line patterns and at least one edge portion of each of the plurality of second line patterns are adjacent to each other; and removing at least a portion of the plurality of first line patterns by etching.
Claims32
A pattern forming method comprising:
- forming a plurality of first line patterns of which longitudinal direction is a first direction and a plurality of second line patterns of which longitudinal direction is the first direction and of which etching characteristic is different from etching characteristic of the plurality of first line patterns, so that at least one edge portion of each of the plurality of first line patterns and at least one edge portion of each of the plurality of second line patterns are adjacent to each other;
- and
- removing at least a portion of the plurality of first line patterns by etching.
A pattern forming method comprising:
- forming, in a second layer located above a first layer of a substrate, a plurality of first line patterns of which longitudinal direction is a first direction and a plurality of second line patterns of which longitudinal direction is the first direction and of which etching characteristic is different from etching characteristic of the plurality of first line patterns, so that at least one edge portion of each of the plurality of first line patterns and at least one edge portion of each of the plurality of second line patterns are adjacent to each other;
- removing a portion of the plurality of first line patterns by etching;
- removing a portion of the plurality of second line patterns by the etching;
- depositing a first mask material, for forming a first mask layer, in a position at which the portion of the plurality of first line patterns has been removed and in a position at which the portion of the plurality of second line patterns has been removed,
- forming the first mask layer by removing the plurality of first and second line patterns in the second layer;
- and
- processing the first layer via the first mask layer.
A pattern forming method comprising:
- forming a first pattern having a first line pattern on a substrate;
- forming a second pattern having a second line pattern at a position above the first pattern, the second line pattern extending in a direction crossing the first line pattern;
- forming a third pattern having a plurality of third line patterns at a position above the second pattern, a longitudinal direction of the plurality of third line patterns being a direction crossing the second line pattern;
- forming a fourth pattern having a first opening at a position above the third pattern;
- removing a portion of the plurality of third line patterns via the first opening;
- and
- removing a portion of the second pattern by using an edge portion of one of the plurality of third line patterns or a portion corresponding to the edge portion.
Dependencies are inferred from the claim text.