Lithography system and method for patterning photoresist layer on euv mask

A method of lithographing a photoresist layer on an EUV mask, comprising:

• placing an EUV mask that has a photoresist layer thereon onto a stage;
• placing a coupling module having at least one contact element in manner that allows the at least one mask contact element penetrating through the photoresist layer to touch the EUV mask, wherein the at least one contact element is electrically connected to an ammeter that has an end connected to a ground potential;
• patterning the photoresist layer by direct writing of a radiation;
• and
• measuring a current conducting from the EUV mask to the ground potential by the ammeter while providing a compensation current opposite to the current to the EUV mask by the ammeter.

A method of lithographing a photoresist layer on an EUV mask, comprising:

• forming a reflective multilayer structure over a low thermal expansion material substrate;
• forming an anti-reflection layer over the reflective multilayer structure;
• depositing a photoresist layer over the anti-reflection layer;
• placing a coupling module having at least one contact element in manner that allows the at least one mask contact element penetrating through the photoresist layer to touch the anti-reflection layer, wherein the at least one contact element is electrically connected to an ammeter that has an end connected to a ground potential;
• patterning the photoresist layer by direct writing of a radiation;
• and
• measuring a current conducting from the anti-reflection layer to the ground potential by the ammeter while providing a compensation current opposite to the current to the anti-reflection layer by the ammeter.