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US 2015/0307989 A1Published application
Atomic layer deposition method and apparatuses
AssigneePicosun Oy
InventorSven Lindfors
Life of this patent
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Abstract
A method includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions, and using dry air in the reactor as purge gas.
Claims17
A method comprising:
- operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions;
- and
- using dry air in the reactor as purge gas.
An apparatus comprising:
- an atomic layer deposition reaction chamber configured to deposit material on at least one substrate by sequential self-saturating surface reactions;
- and
- a dry air in-feed line from a dry air source to feed dry air as purge gas into a reaction chamber of the reactor.
An apparatus comprising:
- means for operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions;
- and
- means for using dry air in the reactor as purge gas.
Dependencies are inferred from the claim text.