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US 2015/0307345 A1Published application
Electronic device and manufacturing method of the same
AssigneeKabushiki Kaisha Toshiba
InventorsKei OBARA, Tsuyoshi HIRAYU, Kiyonori IGARASHI
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Abstract
According to one embodiment, an electronic device includes a MEMS element formed on an underlying region, and a stack film covering the MEMS element and forming a cavity part inside, wherein the stack film includes a first layer having a hole, a second layer provided on the first layer and covering the hole, a third layer provided on the second layer and formed of an oxide, and a fourth layer provided on the third layer and formed of a nitride.
Claims17
An electronic device comprising:
- a MEMS element formed on an underlying region;
- and
- a stack film covering the MEMS element and forming a cavity part inside,
- wherein the stack film includes
- a first layer having a hole,
- a second layer provided on the first layer and covering the hole,
- a third layer provided on the second layer and formed of an oxide, and
- a fourth layer provided on the third layer and formed of a nitride.
5 more elements
A manufacturing method of an electronic device, comprising:
- forming a MEMS element on an underlying region;
- and
- forming a stack film covering the MEMS element, the stack film forming a cavity part inside,
- wherein forming the stack film includes
- forming a first layer having a hole,
- forming a second layer covering the hole on the first layer,
- forming a third layer formed of an oxide on the second layer, and
- forming a fourth layer formed of a nitride on the third layer.
5 more elements
Dependencies are inferred from the claim text.